, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 stabistors rzx75 series diodea with controlled conductance in a all-glass do-7 envelope intended for low voltage regulation in circuits for clipping, coupling, clamping, meter protection, bias regulation and in many applications which require tight tolerances and low voltage levels. the series consists of 4 types with nominal voltages ranging from 1,4 to 3,6v with a tolerance of 5%. quick reference regulation voltage range regulation voltage tolerance continuous reverse voltage repetitive peak reverse voltage repetitive peak forward current total power dissipation up to tamb = 32 c operating junction temperature data vf vr vrrm ifrm ptot tj nom. max. max. max. max. max. 1,4 to 3,6 5 10 10 250 400 200 v % v v ma. mw og mechanical data do-7 dimensions in mm net tinmd t * i *4? * a 1 max i f" t ' 00.52 max if ? . 25.4 - mln 1 ? .* _ 7.8 t , ^ n . las.* rnox 1 itnft mln. mounting width 13 cathode indicated by coloured band ratings limiting values in accordance with che absolute maximum system (iec134) continuous reverse voltage repetitive peak reverse voltage vr max. 10 v max. 10 v repetitive peak forward current ifrm max. 250 ma total power dissipation up to tamb = 32 c ptot max. 400 mw storage temperature operating junction temperature thermal resistance from junction to ambient in free air tstg -65 to +175 c tj max. 200 c rthj-a 0,42 k/mw nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
characteristics ti = 25 c unless otherwise specified regulation voltage vf (v) at if ? 1 ma BZX75- . . . . mln. c1v4 c2v1 c2v8 c3v6 1, 1, 2, 3, 16 75 33 02 otlp- min. c1v4 c2v1 c2v8 c3v6 1, 1, 2. 3, 33 99 66 42 max. l, 2, 2, 3, 34 05 70 45 10ma nom. 1, 2, 2, 3, 40 10 80 60 max. 1, 2, 2, 3, reverse current vr = 5v 47 21 94 78 temperature coefficient sf (mv/k) at ip ? 1 ma typ. -4 -6 -8 -10 at ip3 10ma typ. -3,3 -5,0 -6,6 -8,2 differential rdlff (0): utlf" typ. 60 90 120 150 atlp- typ. 6 9 12 is BZX75-c1v4 \ BZX75-c2v1 j r bzx7s-c2v8 1 . BZX75-c3v6 f r resistance f - 1 khz 1ma 10ma max 10 15 20 25 500 200 ? na na recovered charge when switched from if s 10 ma to vr = 5 v: rl = 500 q diode capacitance vr - 0; f = 1 mhz q8 > 600 pc cd < 250 pf
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